Studying the charge carrier properties in CuInS<sub>2</sub> films via femtosecond transient absorption and nanosecond transient photocurrents

Studying the charge carrier properties in CuInS₂ films via femtosecond transient absorption and nanosecond transient photocurrents

Tan Mingrui¹, Liu Qinghui¹, Sui Ning¹, Kang Zhihui¹, Zhang Liquan^{1, †}, Zhang Hanzhuang^{1, ‡}, Wang Wenquan¹, Zhou Qiang², Wang Yinghui¹

APN-dependent (a) N and (b) APCE and PCRE under different applied electric fields ( 6.33 × 10 7 V · m − 1 and 1.27 × 10 7 V · m − 1 ). (c) The extracted velocity of charge carrier v and (d) γ versus N under an applied electric field of 6.33 × 10 7 V · m − 1 and 1.27 × 10 7 V · m − 1 , respectively.