Studying the charge carrier properties in CuInS<sub>2</sub> films via femtosecond transient absorption and nanosecond transient photocurrents

Studying the charge carrier properties in CuInS₂ films via femtosecond transient absorption and nanosecond transient photocurrents

Tan Mingrui¹, Liu Qinghui¹, Sui Ning¹, Kang Zhihui¹, Zhang Liquan^{1, †}, Zhang Hanzhuang^{1, ‡}, Wang Wenquan¹, Zhou Qiang², Wang Yinghui¹

(a) The illumination intensity-dependent and (b) applied electric field-dependent transient photocurrent curves. Insets: corresponding maximum (a) illumination intensity-dependent and (b) applied electric field-dependent transient photocurrent. (c) The concentration of extracted charge carriers and (d) α versus applied electric field measured under different illumination intensities ( 0.17 μ J · mm − 2 and 5.31 μ J · mm − 2 ), respectively. The illumination intensities are 8.25, 5.31, 2.99, 1.61, 0.96, 0.56, 0.32, 0.17, 0.062, 0.035, 0.019, and 0.0083 (in units of μ J · mm − 2 ) in (a) and 0.17 μ J · mm − 2 in (b). The applied electric fields are 6.33 × 10 7 V · m − 1 in (a) and 6.33×10⁷, 5.70×10⁷, 5.06×10⁷, 4.43×10⁷, 3.80×10⁷, 3.16×10⁷, 2.53×10⁷, 1.90×10⁷, 1.27×10⁷, and 0.63 ×10⁷ (in units of V · m − 1 ) in (b).