Structural and electrical properties of Ga–Te systems under high pressure
Wang Youchun, Tian Fubo †, Li Da, Duan Defang, Xie Hui, Liu Bingbing, Zhou Qiang, Cui Tian ‡
       

Electron localization function maps in the planes where the gallium and tellurium atoms lie: (a) P63/mmc GaTe on the (110) plane at 0 GPa, (b) P63/mmc GaTe on the (001) plane at 0 GPa, (c) Fm-3m GaTe on the (11–1) plane at 20 GPa, (d) I4/mmm GaTe2 on the (0-10) plane at 60 GPa, (e) C2/m GaTe3 on the (31, 63, –1) plane at 60 GPa. (f) I4/m Ga2Te5 on the (48, –48, –1) plane at 0 GPa.