Structural and electrical properties of Ga–Te systems under high pressure
Wang Youchun
, Tian Fubo
†
, Li Da
, Duan Defang
, Xie Hui
, Liu Bingbing
, Zhou Qiang
, Cui Tian
‡
Electronic band structures of (a)
Fm
-3
m
GaTe, (b)
I
4/
mmm
GaTe
2
, (c)
C
2/
m
GaTe
3
, (d)
I
4/
m
Ga
2
Te
5
.