Structural and electrical properties of Ga–Te systems under high pressure
Wang Youchun, Tian Fubo, Li Da, Duan Defang, Xie Hui, Liu Bingbing, Zhou Qiang, Cui Tian
       

Electronic band structures of (a) Fm-3m GaTe, (b) I4/mmm GaTe2, (c) C2/m GaTe3, (d) I4/m Ga2Te5.