Structural and electrical properties of Ga–Te systems under high pressure
Wang Youchun, Tian Fubo †, Li Da, Duan Defang, Xie Hui, Liu Bingbing, Zhou Qiang, Cui Tian ‡
       

The phonon band structures for Ga–Te compounds: (a) I4/mmm GaTe2, (b) C2/m GaTe3, (c) I4/m Ga2Te5.