Insight into band alignment of Zn(O,S)/CZTSe solar cell by simulation

Jiang Zhen-Wu¹, Gao Shou-Shuai¹, Wang Si-Yu¹, Wang Dong-Xiao¹, Gao Peng², Sun Qiang², Zhou Zhi-Qiang¹, Liu Wei¹, Sun Yun¹, Zhang Yi^{1, †}

J–V curves of devices for N D = 5 × 10 17 cm − 3 , N D = 5 × 10 18 cm − 3 without In₂S₃ layer, N D = 5 × 10 18 cm − 3 with 5-nm-thick In₂S₃ layer remaining on Zn(O,S) layer, N D = 5 × 10 18 cm − 3 with 5-nm-thick In₂S₃ layer remaining on CZTSe layer.