Ultraviolet photodetectors based on wide bandgap oxide semiconductor films
Zhou Changqi1, 2, Ai Qiu1, 2, Chen Xing1, ‡, Gao Xiaohong1, 2, Liu Kewei1, §, Shen Dezhen1
       

(a) Spectral responsivity of the ITO/H-NiO (high conductivity NiO)/IGZO/ITO photodetector under the bias of −3 V. The inset shows the responsivity as a function of the reverse bias. (b) Normalized spectral responsivities of the ITO/L–NiO (low conductivity NiO)/IGZO/ITO, ITO/M–NiO (medium conductivity NiO)/IGZO/ITO, and ITO/H–NiO/IGZO/ITO photodetector structures at -3-V bias.[138]