Ultraviolet photodetectors based on wide bandgap oxide semiconductor films

Zhou Changqi^{1, 2}, Ai Qiu^{1, 2}, Chen Xing^{1, ‡}, Gao Xiaohong^{1, 2}, Liu Kewei^{1, §}, Shen Dezhen¹

Time-dependent photoresponse of the β-Ga₂O₃ thin films prototype photodetector to 254-nm illumination: (a) the ohmic-type device and the Schottky-type device; (b) enlarged view of the rise/decay edges and the corresponding exponential fitting for the ohmic-type device and Schottky type devices, respectively.^[105]