Ultraviolet photodetectors based on wide bandgap oxide semiconductor films

Zhou Changqi^{1, 2}, Ai Qiu^{1, 2}, Chen Xing^{1, ‡}, Gao Xiaohong^{1, 2}, Liu Kewei^{1, §}, Shen Dezhen¹

Energy band diagram and carrier transport process of mixed-phase ZnMgO photodetector at different conditions: (a) at thermal equilibrium, (b) under bias in dark, and (c) under bias with UV illumination.^[72]