Ultraviolet photodetectors based on wide bandgap oxide semiconductor films

Zhou Changqi^{1, 2}, Ai Qiu^{1, 2}, Chen Xing^{1, ‡}, Gao Xiaohong^{1, 2}, Liu Kewei^{1, §}, Shen Dezhen¹

(a) J–V characteristics in dark condition and (b) response spectra of the ZnO UV photodetectors with and without Ag nanoparticles under 15-V bias. (c) Time-dependent photocurrent with periodic switching of UV illumination (380 nm) measured at 30-V bias.^[62]