Ultraviolet photodetectors based on wide bandgap oxide semiconductor films
(a) I–V characteristics of devices in the dark. (b) Spectral responses of the devices under a bias of 10 V. (c) Decay edge of the current response at a bias of 10 V.[
Ultraviolet photodetectors based on wide bandgap oxide semiconductor films |
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(a) I–V characteristics of devices in the dark. (b) Spectral responses of the devices under a bias of 10 V. (c) Decay edge of the current response at a bias of 10 V.[ |
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