Ultraviolet photodetectors based on wide bandgap oxide semiconductor films

Zhou Changqi^{1, 2}, Ai Qiu^{1, 2}, Chen Xing^{1, ‡}, Gao Xiaohong^{1, 2}, Liu Kewei^{1, §}, Shen Dezhen¹

(a) Recovery times of the ZnO-TFT UV photodetector with and without channel surface treatment; XPS spectra of (b) untreated ZnO channel, and (c) oxygen plasma-treated ZnO channel.^[48]