Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga<sub>2</sub>O<sub>3</sub>

Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga₂O₃

Yang Chao¹, Liang Hongwei^{1, †}, Zhang Zhenzhong², Xia Xiaochuan¹, Zhang Heqiu¹, Shen Rensheng¹, Luo Yingmin¹, Du Guotong¹

Time-resolved characteristics of the solar-blind Cu/Ga₂O₃ SBD photodetector measured at: (a) −5 V and (b) −10 V.