Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga2O3
Yang Chao1, Liang Hongwei1, †, Zhang Zhenzhong2, Xia Xiaochuan1, Zhang Heqiu1, Shen Rensheng1, Luo Yingmin1, Du Guotong1
       

The IV characteristics of the photodetector measured at different temperatures: (a) forward IV curves, (b) reverse IV curves under dark and illumination, and (c) the ideality factor and barrier height.