Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga<sub>2</sub>O<sub>3</sub>

Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga₂O₃

Yang Chao¹, Liang Hongwei^{1, †}, Zhang Zhenzhong², Xia Xiaochuan¹, Zhang Heqiu¹, Shen Rensheng¹, Luo Yingmin¹, Du Guotong¹

Photoresponse characteristics for the photodetector: (a) responsivity of the detector measured under 0-V and 42-V biases, and (b) the relation between the reverse bias and the maximum of responsivity and quantum efficiency.