Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga<sub>2</sub>O<sub>3</sub>

Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga₂O₃

Yang Chao¹, Liang Hongwei^{1, †}, Zhang Zhenzhong², Xia Xiaochuan¹, Zhang Heqiu¹, Shen Rensheng¹, Luo Yingmin¹, Du Guotong¹

The I–V characteristics of the Cu/Ga₂O₃ SBD annealed at different temperatures: (a) forward I–V curves (the inset is the top view and schematic structure of the photodetector), (b) reverse I–V curves, and (c) the ideality factor and barrier height.