Fullerene-based electrode interlayers for bandgap tunable organometal perovskite metal–semiconductor–metal photodetectors
Luo Wen, Yan Li-Zhi, Liu Rong, Zou Tao-Yu, Zhou Hang †
       

(a) Schematics of MAPb(I1−xBrx)3 ( 0 ⩽ x ⩽ 1 ) photodetector with fullerene-based interfacial layer. (b) Schematics of the energy diagram of perovskite, ICBA, and PCBM before contact. (c) The SEM image of the surface morphology of an MAPbI3 thin film; the scale bar is 200 nm. (d) The I–V characteristics of devices in the dark and under light illumination at 500 nm with an intensity of 2 mW/cm2.