Short-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer
Current gain cutoff frequency (fT) and power gain cutoff frequency (fmax) as a function of VGS for investigated HEMTs at VDS=5 V.
Short-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer |
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Current gain cutoff frequency (fT) and power gain cutoff frequency (fmax) as a function of VGS for investigated HEMTs at VDS=5 V. |
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