Short-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer
Han Tie-Cheng, Zhao Hong-Dong †, Peng Xiao-Can
       

(a) Gm–VGS and IDS–VGS transfer characteristics of devices at VDS = 5 V. (b) IDS–VGS transfer characteristics plotted by log-scale at VDS= 1 and 4 V for investigated devices, respectively.