Short-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer
Simulated I–V output characteristics for (a) GaN buffer HEMT, (b) Al0.03Ga0.97N buffer HEMT, and (c) B0.01Ga0.99N buffer HEMT.
Short-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer |
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Simulated I–V output characteristics for (a) GaN buffer HEMT, (b) Al0.03Ga0.97N buffer HEMT, and (c) B0.01Ga0.99N buffer HEMT. |
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