Prediction of high-mobility two-dimensional electron gas at KTaO<sub>3</sub>-based heterointerfaces

Prediction of high-mobility two-dimensional electron gas at KTaO₃-based heterointerfaces

Wang Fu-Ning, Li Ji-Chao^†, Li Yi, Zhang Xin-Miao, Wang Xue-Jin, Chen Yu-Fei, Liu Jian, Wang Chun-Lei, Zhao Ming-Lei, Mei Liang-Mo

Calculated polarization P in the AGO (A = La and Nd) films with respect to the AGO film thickness for the (AGO)_m/KTO/(AGO)_m (m = 1–10) heterostructures.