Prediction of high-mobility two-dimensional electron gas at KTaO3-based heterointerfaces
Wang Fu-Ning, Li Ji-Chao †, Li Yi, Zhang Xin-Miao, Wang Xue-Jin, Chen Yu-Fei, Liu Jian, Wang Chun-Lei, Zhao Ming-Lei, Mei Liang-Mo
       

Layer-projected partial DOS of (a) fully relaxed and (b) (NGO)6/(KTO)6.5/(NGO)6 heterostructure, along with the conducting electron charge density from −1 eV to the Fermi level.