Band engineering of B<sub>2</sub>H<sub>2</sub> nanoribbons

Band engineering of B₂H₂ nanoribbons

Lei Bao^{1, 2}, Zhang Yu-Yang^{1, 2, 3}, Du Shi-Xuan^{1, 2, 3, †}

The phonon dispersion and electron localization function of a B₂H₂ ANR-as under a 16% tensile strain. Panel (a) is the phonon dispersion. There is no imaginary frequency, indicating a stable structure. Panel (b) is the corresponding electron localization function. A large number (red) between two boron atoms indicates covalent bonds between atoms.