Tunable 2H–TaSe<sub>2</sub> room-temperature terahertz photodetector

Tunable 2H–TaSe₂ room-temperature terahertz photodetector

Wang Jin^{1, 2}, Guo Cheng^{2, 3}, Guo Wanlong^{2, 3}, Wang Lin^{2, 3, †}, Shi Wangzhou^{1, ‡}, Chen Xiaoshuang^{2, 3, §}

(a) The spectrum response, responsivity, and P_NEP of the device under 120-GHz radiation. (b) The rise time of the terahertz detector when applied an 80-mV bias. (c) The I_ds–V_gs curve and the structure of the 2H–TaSe₂ photodetector. (d) I_Photo varies with the gate voltage, when the bias between the source and the drain is fixed at 10 mV.