Li Jing1, 2, Zhao Ling-Xiao1, Wang Yi-Yan1, Wang Xin-Min1, 2, Ma Chao-Yang1, Zhu Wen-Liang1, 2, Gao Mo-Ran1, 2, Zhang Shuai1, Ren Zhi-An1, 2, 3, Chen Gen-Fu1, 2, 3, †
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(a) and (d) The magnetic field dependence of Hall resistivity
ρ
xy
on samples #1 and #2 at various temperatures, respectively. (b), (c), (e), and (f) The temperature dependence of carrier mobilities and carrier densities of electrons and holes measured on samples #1 and #2, respectively.
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