High quantum efficiency long-/long-wave dual-color type-II InAs/GaSb infrared detector<xref rid="cpb_28_3_038504fn1" ref-type="fn">*</xref><fn id="cpb_28_3_038504fn1"><label>*</label><p>Project supported by the National Key Technology R&D Program of China (Grant Nos. 2018YFA0209104 and 2016YFB0402403).</p></fn>

High quantum efficiency long-/long-wave dual-color type-II InAs/GaSb infrared detector**

Project supported by the National Key Technology R&D Program of China (Grant Nos. 2018YFA0209104 and 2016YFB0402403).

Jiang Zhi^{1, 2}, Sun Yao-Yao^{1, 2}, Guo Chun-Yan^{1, 2}, Lv Yue-Xi^{1, 2}, Hao Hong-Yue^{1, 2}, Jiang Dong-Wei^{1, 2}, Wang Guo-Wei^{1, 2, ‡}, Xu Ying-Qiang^{1, 2}, Niu Zhi-Chuan^{1, 2, †}

(a) The 77 K dark current densities plotted against cutoff wavelength for the blue channel under 20 mV and the red channel under −60 mV. The solid line indicates the dark current density calculated using the empirical Rule 07 model. (b) The specific detectivity spectrum of both channels at different applied bias voltages.