High quantum efficiency long-/long-wave dual-color type-II InAs/GaSb infrared detector<xref rid="cpb_28_3_038504fn1" ref-type="fn">*</xref><fn id="cpb_28_3_038504fn1"><label>*</label><p>Project supported by the National Key Technology R&D Program of China (Grant Nos. 2018YFA0209104 and 2016YFB0402403).</p></fn>

High quantum efficiency long-/long-wave dual-color type-II InAs/GaSb infrared detector**

Project supported by the National Key Technology R&D Program of China (Grant Nos. 2018YFA0209104 and 2016YFB0402403).

Jiang Zhi^{1, 2}, Sun Yao-Yao^{1, 2}, Guo Chun-Yan^{1, 2}, Lv Yue-Xi^{1, 2}, Hao Hong-Yue^{1, 2}, Jiang Dong-Wei^{1, 2}, Wang Guo-Wei^{1, 2, ‡}, Xu Ying-Qiang^{1, 2}, Niu Zhi-Chuan^{1, 2, †}

(a) Dark current density J, differential resistance and area products RA of the dual-color detector with mesa diameter 300 μm. (b) The inverse RA vs. P/A is shown as a function of P/A for the detectors with different sizes. (c) Measured and modeled dark current of the LW/LW dual-color detector under bias from −0.3 V to 0.3 V.