High quantum efficiency long-/long-wave dual-color type-II InAs/GaSb infrared detector<xref rid="cpb_28_3_038504fn1" ref-type="fn">*</xref><fn id="cpb_28_3_038504fn1"><label>*</label><p>Project supported by the National Key Technology R&D Program of China (Grant Nos. 2018YFA0209104 and 2016YFB0402403).</p></fn>

High quantum efficiency long-/long-wave dual-color type-II InAs/GaSb infrared detector**

Project supported by the National Key Technology R&D Program of China (Grant Nos. 2018YFA0209104 and 2016YFB0402403).

Jiang Zhi^{1, 2}, Sun Yao-Yao^{1, 2}, Guo Chun-Yan^{1, 2}, Lv Yue-Xi^{1, 2}, Hao Hong-Yue^{1, 2}, Jiang Dong-Wei^{1, 2}, Wang Guo-Wei^{1, 2, ‡}, Xu Ying-Qiang^{1, 2}, Niu Zhi-Chuan^{1, 2, †}

(a) The band diagram of the M-structure, where E₁b and H₁b represent the band edges of the first electron energy levels and the first hole energy levels in the minibands, respectively. (b) The structure diagram and (c) band alignment of the LW/LW dual-color detector, where the electron QFL and hole QFL represent quasi Fermi levels.