High performance lateral Schottky diodes based on quasi-degenerated Ga2O3*

Project supported by the National Key R&D Program of China (Grant No. 2017YFB0403003), the National Natural Science Foundation of China (Grant Nos. 61774081, 61322403, and 91850112), the State Key R&D Project of Jiangsu, China (Grant No. BE2018115), Shenzhen Fundamental Research Project, China (Grant Nos. 201773239 and 201888588), State Key Laboratory ofWide-Bandgap Semiconductor Power Electric Devices, China (Grant No. 2017KF001), and the Fundamental Research Funds for the Central Universities, China (Grant Nos. 021014380093 and 021014380085).

Xu Yang1, Chen Xuanhu1, Cheng Liang1, Ren Fang-Fang1, 2, 3, Zhou Jianjun4, Bai Song4, Lu Hai1, Gu Shulin1, 2, Zhang Rong1, 2, Zheng Youdou1, 2, Ye Jiandong1, 2, 3, †
       

(a)The geometry of the fabricated Schottky diodes. (b) Optical microscopy image of the TLM structures. (c) Total resistance between Ti/Au electrode spacing for ND=2×1018 cm−3. The inset shows the IV characteristics with different electrode spacings.