High performance lateral Schottky diodes based on quasi-degenerated Ga2O3<xref rid="cpb_28_3_038503fn1" ref-type="fn">*</xref><fn id="cpb_28_3_038503fn1"><label>*</label>Project supported by the National Key R&D Program of China (Grant No. 2017YFB0403003), the National Natural Science Foundation of China (Grant Nos. 61774081, 61322403, and 91850112), the State Key R&D Project of Jiangsu, China (Grant No. BE2018115), Shenzhen Fundamental Research Project, China (Grant Nos. 201773239 and 201888588), State Key Laboratory ofWide-Bandgap Semiconductor Power Electric Devices, China (Grant No. 2017KF001), and the Fundamental Research Funds for the Central Universities, China (Grant Nos. 021014380093 and 021014380085).</fn>

High performance lateral Schottky diodes based on quasi-degenerated Ga₂O₃**

Project supported by the National Key R&D Program of China (Grant No. 2017YFB0403003), the National Natural Science Foundation of China (Grant Nos. 61774081, 61322403, and 91850112), the State Key R&D Project of Jiangsu, China (Grant No. BE2018115), Shenzhen Fundamental Research Project, China (Grant Nos. 201773239 and 201888588), State Key Laboratory ofWide-Bandgap Semiconductor Power Electric Devices, China (Grant No. 2017KF001), and the Fundamental Research Funds for the Central Universities, China (Grant Nos. 021014380093 and 021014380085).

Xu Yang¹, Chen Xuanhu¹, Cheng Liang¹, Ren Fang-Fang^{1, 2, 3}, Zhou Jianjun⁴, Bai Song⁴, Lu Hai¹, Gu Shulin^{1, 2}, Zhang Rong^{1, 2}, Zheng Youdou^{1, 2}, Ye Jiandong^{1, 2, 3, †}

(a)The geometry of the fabricated Schottky diodes. (b) Optical microscopy image of the TLM structures. (c) Total resistance between Ti/Au electrode spacing for N_D=2×10¹⁸ cm⁻³. The inset shows the I–V characteristics with different electrode spacings.