High performance lateral Schottky diodes based on quasi-degenerated Ga2O3 Project supported by the National Key R&D Program of China (Grant No. 2017YFB0403003), the National Natural Science Foundation of China (Grant Nos. 61774081, 61322403, and 91850112), the State Key R&D Project of Jiangsu, China (Grant No. BE2018115), Shenzhen Fundamental Research Project, China (Grant Nos. 201773239 and 201888588), State Key Laboratory ofWide-Bandgap Semiconductor Power Electric Devices, China (Grant No. 2017KF001), and the Fundamental Research Funds for the Central Universities, China (Grant Nos. 021014380093 and 021014380085). |
(a)The geometry of the fabricated Schottky diodes. (b) Optical microscopy image of the TLM structures. (c) Total resistance between Ti/Au electrode spacing for ND=2×1018 cm−3. The inset shows the I–V characteristics with different electrode spacings. |