Double superlattice structure for improving the performance of ultraviolet light-emitting diodes<xref rid="cpb_28_3_038502fn1" ref-type="fn">*</xref><fn id="cpb_28_3_038502fn1"><label>*</label><p>Project supported by the National Key R&D Program of China (Grant Nos. 2016YFB0400800, 2016YFB0400801, and 2016YFB0400802), the National Natural Science Foundation of China (Grant No. 61634005), and the Fundamental Research Funds for the Central Universities, China (Grant No. JBZ171101).</p></fn>

Double superlattice structure for improving the performance of ultraviolet light-emitting diodes**

Project supported by the National Key R&D Program of China (Grant Nos. 2016YFB0400800, 2016YFB0400801, and 2016YFB0400802), the National Natural Science Foundation of China (Grant No. 61634005), and the Fundamental Research Funds for the Central Universities, China (Grant No. JBZ171101).

Wang Yan-Li¹, Li Pei-Xian¹, Xu Sheng-Rui^{2, †}, Zhou Xiao-Wei^{1, ‡}, Zhang Xin-Yu¹, Jiang Si-Yu¹, Huang Ru-Xue¹, Liu Yang¹, Zi Ya-Li¹, Wu Jin-Xing¹, Hao Yue²

(a) Measured I–V curves for samples B and C and simulated I–V curves for samples A, B, and C. Inset is the photoluminescence spectra of samples B and C. (b) Simulated optical output power of samples A, B, and C, and measured optical output power and external quantum efficiency of samples B and C.