Double superlattice structure for improving the performance of ultraviolet light-emitting diodes<xref rid="cpb_28_3_038502fn1" ref-type="fn">*</xref><fn id="cpb_28_3_038502fn1"><label>*</label><p>Project supported by the National Key R&D Program of China (Grant Nos. 2016YFB0400800, 2016YFB0400801, and 2016YFB0400802), the National Natural Science Foundation of China (Grant No. 61634005), and the Fundamental Research Funds for the Central Universities, China (Grant No. JBZ171101).</p></fn>

Double superlattice structure for improving the performance of ultraviolet light-emitting diodes**

Project supported by the National Key R&D Program of China (Grant Nos. 2016YFB0400800, 2016YFB0400801, and 2016YFB0400802), the National Natural Science Foundation of China (Grant No. 61634005), and the Fundamental Research Funds for the Central Universities, China (Grant No. JBZ171101).

Wang Yan-Li¹, Li Pei-Xian¹, Xu Sheng-Rui^{2, †}, Zhou Xiao-Wei^{1, ‡}, Zhang Xin-Yu¹, Jiang Si-Yu¹, Huang Ru-Xue¹, Liu Yang¹, Zi Ya-Li¹, Wu Jin-Xing¹, Hao Yue²

Numerically simulated (a) electron and (b) hole concentration profiles of the three samples at 120 mA.