Realizing photomultiplication-type organic photodetectors based on C<sub>60</sub>-doped bulk heterojunction structure at low bias<xref rid="cpb_28_3_038501fn1" ref-type="fn">*</xref><fn id="cpb_28_3_038501fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant No. 61106043), the Natural Science Foundation of Shaanxi Province, China (Grant No. 2015JM6267), and Program of Xi’an University of Technology, China (Grant No. 103-4515013).</p></fn>

Realizing photomultiplication-type organic photodetectors based on C₆₀-doped bulk heterojunction structure at low bias**

Project supported by the National Natural Science Foundation of China (Grant No. 61106043), the Natural Science Foundation of Shaanxi Province, China (Grant No. 2015JM6267), and Program of Xi’an University of Technology, China (Grant No. 103-4515013).

Gong Wei, An Tao^†, Liu Xinying, Lu Gang

(a) J–V curves in darkness and under 460 nm (5.54 mW·cm⁻²) illumination for the P3HT:C₆₀ (10:0.3, wt/wt) and PBDT-TT-F:C₆₀ (10:0.3, wt/wt) devices. (b) EQE–V curves of the corresponding P3HT:C₆₀ and PBDT-TT-F:C₆₀ devices under 460 nm (5.54 mW·cm⁻²) illumination.