Realizing photomultiplication-type organic photodetectors based on C<sub>60</sub>-doped bulk heterojunction structure at low bias<xref rid="cpb_28_3_038501fn1" ref-type="fn">*</xref><fn id="cpb_28_3_038501fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant No. 61106043), the Natural Science Foundation of Shaanxi Province, China (Grant No. 2015JM6267), and Program of Xi’an University of Technology, China (Grant No. 103-4515013).</p></fn>

Realizing photomultiplication-type organic photodetectors based on C₆₀-doped bulk heterojunction structure at low bias**

Project supported by the National Natural Science Foundation of China (Grant No. 61106043), the Natural Science Foundation of Shaanxi Province, China (Grant No. 2015JM6267), and Program of Xi’an University of Technology, China (Grant No. 103-4515013).

Gong Wei, An Tao^†, Liu Xinying, Lu Gang

(a), (b) J–V curves in darkness and and under 460 nm (0.21 mW·cm⁻²) illumination for the C₆₀-doped P3HT:PC₆₁BM and C₆₀-doped PBDT-TT-F:PC₆₁BM devices. (c) Experimental measured dark J–V curves (symbols) and the simulated plots (red line, J ∝ V^k) of the devices under reverse bias. (d) EQE–V curves of the two kinds of the active layer devices under 460 nm (0.21 mW·cm⁻²) illumination.