Photodetectors based on small-molecule organic semiconductor crystals*

Project supported by the National Natural Science Foundation of China (Grant Nos. 51672180, 51622306, and 21673151), Collaborative Innovation Center of Suzhou Nano Science & Technology, the Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD), the 111 Project, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices.
Pan Jing, Deng Wei, Xu Xiuzhen, Jiang Tianhao, Zhang Xiujuan †, Jie Jiansheng ‡
       

(a)–(d) Optical, SEM, AFM characterizations and the height profile of a CuPc/F16CuPc p–n junction nanowire, respectively. (a)–(d) Reproduced with permission.[51] Copyright 2010, American Chemical Society. (e), (f) SEM images of the CuPc/H2TPyP p–n junction and the corresponding device, respectively. (e), (f) Reproduced with permission.[52] Copyright 2012, Wiley-VCH. (g) Schematic illustration of the transfer and patterning procedure for the fabrication of cross-stacked organic p–n junctions. (h) SEM image of the cross-stacked C60/TIPS-PEN p–n junction. (i) Photograph of integrated C60/TIPS-PEN photodiodes on a flexible substrate. (g)–(i) Reproduced with permission.[53] Copyright 2014, American Chemical Society. (j) AFM images of a graphene layer before (left) and after (right) epitaxial growth of C8-BTBT. Scale bar: 2 μm. (k) Raman spectrum of the C8-BTBT layer grown on graphene. Inset: Raman mapping of the C8-BTBT signal. Scale bar: 2 μm. (l) The device structure illustration of a PTCDA/C8-BTBT p–n junction photodiode. (m) I–V characteristics of the PTCDA/C8-BTBT p–n junction in linear scale (black) and log scale (blue), the red line is the fitting curve of a standard diode. (j)–(m) Reproduced with permission.[54] Copyright 2016, American Chemical Society.