Photodetectors based on small-molecule organic semiconductor crystals<xref rid="cpb_28_3_038102fn1" ref-type="fn">*</xref><fn id="cpb_28_3_038102fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant Nos. 51672180, 51622306, and 21673151), Collaborative Innovation Center of Suzhou Nano Science & Technology, the Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD), the 111 Project, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices.</p></fn>

Photodetectors based on small-molecule organic semiconductor crystals**

Project supported by the National Natural Science Foundation of China (Grant Nos. 51672180, 51622306, and 21673151), Collaborative Innovation Center of Suzhou Nano Science & Technology, the Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD), the 111 Project, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices.

Pan Jing, Deng Wei, Xu Xiuzhen, Jiang Tianhao, Zhang Xiujuan^†, Jie Jiansheng^‡

(a), (b) Optical microscopy images of C8-BTBT nanoribbon arrays and a single NDI nanoribbon, respectively. (c) Transfer characteristics of the C8-BTBT device (V_SD = −30 V) in dark condition (red curve) and under the illumination of 280 nm (blue curve), 365 nm (yellow curve), 405 nm (magenta curve), and visible light (green curve). (d), (e) Absorption spectra of C8-BTBT crystals and NDI derivatives in different phases, respectively. (f) Relative photocurrent and threshold voltage change of OPTs based on NDI derivatives under the illumination of light with different wavelengths. (b), (e), (f) Reproduced with permission.^[46] Copyright 2018, American Chemical Society. (g) Light on/off characteristics of the C8-BTBT device, the inset indicates the rise time of the device. (h) Multiple-stage modulation of I_DS by changing the gate bias: ① light-on, ② light-off, ③ V_G = −30 V, ④ V_G = 0 V, ⑤ V_G = −50 V, ⑥ V_G = 0 V, ⑦ V_G = −100 V. (a), (c), (d), (g), (h) Reproduced with permission.^[45] Copyright 2015, Wiley-VCH. (i) SEM image of PTCDA nanoparticles. Inset: SAED pattern of a PTCDA nanoparticle. (j) Schematic illustration of a single PTCDA nanoparticle-based OPT. (k) Three-dimensional (3D) transmission electron microscopy (TEM) tomography image of the nanoparticle device. (l) Photoswitching behavior of the nanoparticle device with different UV intensities: P₁ = 1.32 mW·cm⁻² (blue curve), P₂ = 2.24 mW·cm⁻² (red curve). (i)–(l) Reproduced with permission.^[48] Copyright 2013, AIP Publishing.