Efficient doping modulation of monolayer WS<sub>2</sub> for optoelectronic applications<xref rid="cpb_28_3_037803fn1" ref-type="fn">*</xref><fn id="cpb_28_3_037803fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant No. 21405109) and Seed Foundation of State Key Laboratory of Precision Measurement Technology and Instruments, China (Grant No. 1710).</p></fn>

Efficient doping modulation of monolayer WS₂ for optoelectronic applications**

Project supported by the National Natural Science Foundation of China (Grant No. 21405109) and Seed Foundation of State Key Laboratory of Precision Measurement Technology and Instruments, China (Grant No. 1710).

Ma Xinli, Zhang Rongjie, An Chunhua, Wu Sen, Hu Xiaodong, Liu Jing^†

Electrical properties of the chemically doped WS₂ FETs. (a) Schematic illustration of the chemical doping mechanism. (b), (c) Transfer characteristic curves of WS₂ FET in (b) linear and (c) logarithmic scale before and after PPh₃ coating. (d) Output characteristics of PPh₃-doped WS₂ FET. (e), (f) Transfer characteristic curves of WS₂ FET in (e) linear and (f) logarithmic scale before and after AuCl₃ coating. (g) Output characteristics of AuCl₃-doped WS₂ FET.