Efficient doping modulation of monolayer WS<sub>2</sub> for optoelectronic applications<xref rid="cpb_28_3_037803fn1" ref-type="fn">*</xref><fn id="cpb_28_3_037803fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant No. 21405109) and Seed Foundation of State Key Laboratory of Precision Measurement Technology and Instruments, China (Grant No. 1710).</p></fn>

Efficient doping modulation of monolayer WS₂ for optoelectronic applications**

Project supported by the National Natural Science Foundation of China (Grant No. 21405109) and Seed Foundation of State Key Laboratory of Precision Measurement Technology and Instruments, China (Grant No. 1710).

Ma Xinli, Zhang Rongjie, An Chunhua, Wu Sen, Hu Xiaodong, Liu Jing^†

Electrical properties of the monolayer WS₂ FET. (a) Optical topography of the device. (b), (c) Transfer characteristic curves of the device in (b) linear and (c) logarithmic scale. (d) Output characteristics of the device.