Efficient doping modulation of monolayer WS<sub>2</sub> for optoelectronic applications<xref rid="cpb_28_3_037803fn1" ref-type="fn">*</xref><fn id="cpb_28_3_037803fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant No. 21405109) and Seed Foundation of State Key Laboratory of Precision Measurement Technology and Instruments, China (Grant No. 1710).</p></fn>

Efficient doping modulation of monolayer WS₂ for optoelectronic applications**

Project supported by the National Natural Science Foundation of China (Grant No. 21405109) and Seed Foundation of State Key Laboratory of Precision Measurement Technology and Instruments, China (Grant No. 1710).

Ma Xinli, Zhang Rongjie, An Chunhua, Wu Sen, Hu Xiaodong, Liu Jing^†

Characterization of CVD-grown WS₂. (a) AFM image, (b) thickness profile, (c) Raman and (d) photoluminescence spectra of the CVD-grown monolayer WS₂.