Efficient doping modulation of monolayer WS<sub>2</sub> for optoelectronic applications<xref rid="cpb_28_3_037803fn1" ref-type="fn">*</xref><fn id="cpb_28_3_037803fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant No. 21405109) and Seed Foundation of State Key Laboratory of Precision Measurement Technology and Instruments, China (Grant No. 1710).</p></fn>

Efficient doping modulation of monolayer WS₂ for optoelectronic applications**

Project supported by the National Natural Science Foundation of China (Grant No. 21405109) and Seed Foundation of State Key Laboratory of Precision Measurement Technology and Instruments, China (Grant No. 1710).

Ma Xinli, Zhang Rongjie, An Chunhua, Wu Sen, Hu Xiaodong, Liu Jing^†

Growth of monolayer WS₂. (a) Experimental set-up of the CVD furnace. (b) Temperature variation curves of WO₃ and S during CVD growth. (c), (d) Optical images of the as-grown WS₂. (e) Molecular structure of the monolayer WS₂.