SnS2 quantum dots: Facile synthesis, properties, and applications in ultraviolet photodetector Project supported by the Equipment Pre-research Fund under the Equipment Development Department (EDD) of China’s Central Military Commission (CMC) (Grant No. 1422030209), the Innovation Team Program of China North Industries Group Corporation Limited (NORINCO) Group (Grant No. 2017CX024), and the National Natural Science Foundation of China (Grant Nos. 61106098 and 11864044). |
(a) Schematic representation of the synthesis of SnS2 QDs. (b) The TEM image of SnS2 QDs and the size distribution of the SnS2 QDs. (c) The HRTEM image of the SnS2 QDs with lattice fringe spacing of 0.277 nm. (d) The line-profile analysis of the SnS2 QDs as shown in (c). (e) AFM image of the SnS2 QDs on Si substrate. (f) The XRD pattern of the SnS2 QDs. (g) The Raman spectrum of the SnS2 QDs on Si substrate with schematics of Eg and A1g Raman vibrational modes. (h) UV–Vis absorption spectra of SnS2 QDs aqueous solution. (i) Tauc plot for estimating Eg of SnS2 QDs. |