Mechanism of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures via laser annealing<xref rid="cpb_28_3_037302fn1" ref-type="fn">*</xref><fn id="cpb_28_3_037302fn1"><label>*</label><p>Projects supported by the National Natural Science Foundation of China (Grant Nos. 51577169 and 51777187) and the National Key Research and Development Program of China (Grant No. 2017YFB0402804).</p></fn>

Mechanism of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures via laser annealing**

Projects supported by the National Natural Science Foundation of China (Grant Nos. 51577169 and 51777187) and the National Key Research and Development Program of China (Grant No. 2017YFB0402804).

Hou Mingchen, Xie Gang^†, Sheng Kuang

The contact resistance as a function of the annealing temperature for the RTA sample and the laser energy density for the LA sample, respectively.