Stacked lateral double-diffused metal-oxide-semiconductor field effect transistor with enhanced depletion effect by surface substrate Project supported by the National Natural Science Foundation of China (Grant No. 61464003) and the Guangxi Natural Science Foundation, China (Grant Nos. 2015GXNSFAA139300 and 2018JJA170010). |
BV and Ron,sp versus Nd with different H. |
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