Stacked lateral double-diffused metal-oxide-semiconductor field effect transistor with enhanced depletion effect by surface substrate<xref rid="cpb_28_3_037201fn1" ref-type="fn">*</xref><fn id="cpb_28_3_037201fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant No. 61464003) and the Guangxi Natural Science Foundation, China (Grant Nos. 2015GXNSFAA139300 and 2018JJA170010).</p></fn>

Stacked lateral double-diffused metal-oxide-semiconductor field effect transistor with enhanced depletion effect by surface substrate**

Project supported by the National Natural Science Foundation of China (Grant No. 61464003) and the Guangxi Natural Science Foundation, China (Grant Nos. 2015GXNSFAA139300 and 2018JJA170010).

Li Qi, Zhang Zhao-Yang, Li Hai-Ou, Sun Tang-You, Chen Yong-He, Zuo Yuan^†

Lateral electric field distribution at breakdown for two LDMOSs: (a) y = 0.001 μm, (b) y = 2.001 μm and y = 3.5 μm.