Negative differential resistance and quantum oscillations in FeSb<sub>2</sub> with embedded antimony<xref rid="cpb_28_3_037104fn1" ref-type="fn">*</xref><fn id="cpb_28_3_037104fn1"><label>*</label><p>Project supported by Guangdong Innovative and Entrepreneurial Research Team Program, China (Grant No. 2016ZT06D348), the National Natural Science Foundation of China (Grant No. 11874193), and the Shenzhen Fundamental Subject Research Program, China (Grant Nos. JCYJ20170817110751776 and JCYJ20170307105434022). The work at Brookhaven is supported by the US Department of Energy, Office of Basic Energy Sciences as part of the Computational Material Science Program (material synthesis).</p></fn>

Negative differential resistance and quantum oscillations in FeSb₂ with embedded antimony**

Project supported by Guangdong Innovative and Entrepreneurial Research Team Program, China (Grant No. 2016ZT06D348), the National Natural Science Foundation of China (Grant No. 11874193), and the Shenzhen Fundamental Subject Research Program, China (Grant Nos. JCYJ20170817110751776 and JCYJ20170307105434022). The work at Brookhaven is supported by the US Department of Energy, Office of Basic Energy Sciences as part of the Computational Material Science Program (material synthesis).

Tang Fangdong^{1, 2}, Du Qianheng^{3, 4}, Petrovic Cedomir^{3, 4}, Zhang Wei¹, He Mingquan⁵, Zhang Liyuan^{2, †}

(a) Current–voltage (I–V) characteristics measured at various temperatures from 3.5 K to 15 K using four-terminal geometry. (b) Differential resistance obtained by numerical differentiating the I–V curves in panel (a), which shows a wide NDR. (c) Comparison between I–V curves captured by sweeping current bias and sweeping voltage bias using two-terminal geometry. The “S”-type region of sweeping current mode corresponds to the hysteresis of sweeping voltage mode.