Negative differential resistance and quantum oscillations in FeSb<sub>2</sub> with embedded antimony<xref rid="cpb_28_3_037104fn1" ref-type="fn">*</xref><fn id="cpb_28_3_037104fn1"><label>*</label><p>Project supported by Guangdong Innovative and Entrepreneurial Research Team Program, China (Grant No. 2016ZT06D348), the National Natural Science Foundation of China (Grant No. 11874193), and the Shenzhen Fundamental Subject Research Program, China (Grant Nos. JCYJ20170817110751776 and JCYJ20170307105434022). The work at Brookhaven is supported by the US Department of Energy, Office of Basic Energy Sciences as part of the Computational Material Science Program (material synthesis).</p></fn>

Negative differential resistance and quantum oscillations in FeSb₂ with embedded antimony**

Project supported by Guangdong Innovative and Entrepreneurial Research Team Program, China (Grant No. 2016ZT06D348), the National Natural Science Foundation of China (Grant No. 11874193), and the Shenzhen Fundamental Subject Research Program, China (Grant Nos. JCYJ20170817110751776 and JCYJ20170307105434022). The work at Brookhaven is supported by the US Department of Energy, Office of Basic Energy Sciences as part of the Computational Material Science Program (material synthesis).

Tang Fangdong^{1, 2}, Du Qianheng^{3, 4}, Petrovic Cedomir^{3, 4}, Zhang Wei¹, He Mingquan⁵, Zhang Liyuan^{2, †}

Magnetotransport properties of FeSb₂ single crystals. (a) The temperature dependence of the resistivity of three FeSb₂ samples (S1, S2, and S3). Inset: Arrhenius plot lnρ(T)∝ T⁻¹ of the temperature regimes where ρ(T) is dominated by thermally activated transport, yields gap one ∼ 28 meV for 40 K–100 K and gap two ∼ 6 meV for 5 K–12 K regime. (b) The magnetoresistivity Δρ/ρ and Hall resistivity as a function of magnetic field at various temperatures. Left inset: zoom in of the 1.5 K curve shows weak localization effect. (c) Two-carrier model analysis of the magnetic field dependence of the conductivity tensor σ_xy from 5 K to 25 K for S1. (d) 1/T dependence of the carrier density and mobility for the dominating band 1 with higher mobility evaluated from panel (c). The dashed black line describes a thermal activation formulation n ∝ exp(−Δ/2k_BT), with Δ ∼ 8.6 meV.