Graphene-like Be3X2 (X = C, Si, Ge, Sn): A new family of two-dimensional topological insulators<xref rid="cpb_28_3_037101_fn1" ref-type="fn">*</xref><fn id="cpb_28_3_037101_fn1"><label>*</label>Project supported by the National Natural Science Foundation of China (Grant Nos. 11674136 and 11564022), the Thousand Talents Plan — the Recruitment Program for Young Professionals, China (Grant No. 1097816002), Yunnan Province for Recruiting High-Caliber Technological Talents, China (Grant No. 1097816002), Reserve Talents for Yunnan Young and Middle-aged Academic and Technical Leaders, China (Grant No. 2017HB010), the Academic Qinglan Project of Kunming University of Science and Technology (KUST), China (Grant No. 1407840010), the Analysis and Testing Fund of KUST, China (Grant No. 2017M20162230010), and the High-level Talents of KUST, China (Grant No. 1411909425).</fn>

Graphene-like Be₃X₂ (X = C, Si, Ge, Sn): A new family of two-dimensional topological insulators**

Project supported by the National Natural Science Foundation of China (Grant Nos. 11674136 and 11564022), the Thousand Talents Plan — the Recruitment Program for Young Professionals, China (Grant No. 1097816002), Yunnan Province for Recruiting High-Caliber Technological Talents, China (Grant No. 1097816002), Reserve Talents for Yunnan Young and Middle-aged Academic and Technical Leaders, China (Grant No. 2017HB010), the Academic Qinglan Project of Kunming University of Science and Technology (KUST), China (Grant No. 1407840010), the Analysis and Testing Fund of KUST, China (Grant No. 2017M20162230010), and the High-level Talents of KUST, China (Grant No. 1411909425).

Song Lingling¹, Zhang Lizhi², Guan Yurou¹, Lu Jianchen¹, Yan Cuixia^{1, †}, Cai Jinming^{1, ‡}

Electronic properties of Be₃Sn₂. (a) Band structures with (black line) and without (blue dash) SOC. (b) Projected density of states without considering SOC. (c) Zoom-in figure around K points of the band structures considering the SOC. (d) The semi-infinite Dirac edge states around the Fermi level.