Graphene-like Be3X2 (X = C, Si, Ge, Sn): A new family of two-dimensional topological insulators Project supported by the National Natural Science Foundation of China (Grant Nos. 11674136 and 11564022), the Thousand Talents Plan — the Recruitment Program for Young Professionals, China (Grant No. 1097816002), Yunnan Province for Recruiting High-Caliber Technological Talents, China (Grant No. 1097816002), Reserve Talents for Yunnan Young and Middle-aged Academic and Technical Leaders, China (Grant No. 2017HB010), the Academic Qinglan Project of Kunming University of Science and Technology (KUST), China (Grant No. 1407840010), the Analysis and Testing Fund of KUST, China (Grant No. 2017M20162230010), and the High-level Talents of KUST, China (Grant No. 1411909425). |
(a) Band structures of Be3Si2 with SOC around K points, where the inset is the zoom-in view around the Fermi level. (b) The semi-infinite Dirac edge states around the Fermi level. |