Graphene-like Be3X2 (X = C, Si, Ge, Sn): A new family of two-dimensional topological insulators<xref rid="cpb_28_3_037101_fn1" ref-type="fn">*</xref><fn id="cpb_28_3_037101_fn1"><label>*</label>Project supported by the National Natural Science Foundation of China (Grant Nos. 11674136 and 11564022), the Thousand Talents Plan — the Recruitment Program for Young Professionals, China (Grant No. 1097816002), Yunnan Province for Recruiting High-Caliber Technological Talents, China (Grant No. 1097816002), Reserve Talents for Yunnan Young and Middle-aged Academic and Technical Leaders, China (Grant No. 2017HB010), the Academic Qinglan Project of Kunming University of Science and Technology (KUST), China (Grant No. 1407840010), the Analysis and Testing Fund of KUST, China (Grant No. 2017M20162230010), and the High-level Talents of KUST, China (Grant No. 1411909425).</fn>

Graphene-like Be₃X₂ (X = C, Si, Ge, Sn): A new family of two-dimensional topological insulators**

Project supported by the National Natural Science Foundation of China (Grant Nos. 11674136 and 11564022), the Thousand Talents Plan — the Recruitment Program for Young Professionals, China (Grant No. 1097816002), Yunnan Province for Recruiting High-Caliber Technological Talents, China (Grant No. 1097816002), Reserve Talents for Yunnan Young and Middle-aged Academic and Technical Leaders, China (Grant No. 2017HB010), the Academic Qinglan Project of Kunming University of Science and Technology (KUST), China (Grant No. 1407840010), the Analysis and Testing Fund of KUST, China (Grant No. 2017M20162230010), and the High-level Talents of KUST, China (Grant No. 1411909425).

Song Lingling¹, Zhang Lizhi², Guan Yurou¹, Lu Jianchen¹, Yan Cuixia^{1, †}, Cai Jinming^{1, ‡}

Electronic structures of Be₃Si₂: (a) band structure and PDOS, (b) 3D valence and conduction bands around the Fermi level, (c) and (d) the real space charge distributions of HOB and LUB.