High quality 2-μm GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy<xref rid="cpb_28_3_034202fn1" ref-type="fn">*</xref><fn id="cpb_28_3_034202fn1"><label>*</label><p>Project supported by the Major Program of the National Natural Science Foundation of China (Grant Nos. 61790581, 61790582, and 61790584), the National Natural Science Foundation of China (Grant No. 61435012), and the Scientific Instrument Developing Project of the Chinese Academy of Sciences (Grant No. YJKYYQ20170032).</p></fn>

High quality 2-μm GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy**

Project supported by the Major Program of the National Natural Science Foundation of China (Grant Nos. 61790581, 61790582, and 61790584), the National Natural Science Foundation of China (Grant No. 61435012), and the Scientific Instrument Developing Project of the Chinese Academy of Sciences (Grant No. YJKYYQ20170032).

Shang Jin-Ming^{1, 2}, Feng Jian^{2, 3}, Yang Cheng-Ao^{1, 2}, Xie Sheng-Wen^{1, 2}, Zhang Yi^{1, 2}, Tong Cun-Zhu^{2, 3}, Zhang Yu^{1, 2, †}, Niu Zhi-Chuan^{1, 2, ‡}

SEM image of the SDL epitaxial layer. (a) Gain region and confinement region of the SDL chip. (b) DBR consisting of AlAs_0.09Sb_0.91 and GaSb.