Amorphous Si critical dimension structures with direct Si lattice calibration<xref rid="cpb_28_3_030601_fn1" ref-type="fn">*</xref><fn id="cpb_28_3_030601_fn1"><label>*</label><p>Project supported by the National Key Scientific Instrument and Equipment Development Projects of China (Grant No. 2014YQ090709), the National Key Research and Development Program of China (Grant No. 2016YFA0200902), and Major Projects of Science and Technology Commission of Shanghai, China (Grant No. 17JC1400800).</p></fn>

Amorphous Si critical dimension structures with direct Si lattice calibration**

Project supported by the National Key Scientific Instrument and Equipment Development Projects of China (Grant No. 2014YQ090709), the National Key Research and Development Program of China (Grant No. 2016YFA0200902), and Major Projects of Science and Technology Commission of Shanghai, China (Grant No. 17JC1400800).

Wu Ziruo¹, Cai Yanni¹, Wang Xingrui¹, Zhang Longfei¹, Deng Xiao^{2, †}, Cheng Xinbin¹, Li Tongbao¹

STEM images of different parts of multilayer structures: (a) CD structure together with the Si (111) substrate, (b) Si (111) substrate, (c) deposition layer for CD with Si (111) substrate in the bulk.